{"containers": {"cna": {"affected": [{"product": "Micron ddr4_sdram", "vendor": "Micron", "versions": [{"status": "affected", "version": "1"}]}, {"product": "Samsung ddr4_sdram", "vendor": "Samsung", "versions": [{"status": "affected", "version": "1"}]}, {"product": "SK Hynix ddr4_sdram", "vendor": "SK Hynix", "versions": [{"status": "affected", "version": "1"}]}, {"product": "Micron lpddr4", "vendor": "Micron", "versions": [{"status": "affected", "version": "1"}]}, {"product": "Samsung lpddr4", "vendor": "Samsung", "versions": [{"status": "affected", "version": "1"}]}, {"product": "SK Hynix lpddr4", "vendor": "SK Hynix", "versions": [{"status": "affected", "version": "1"}]}], "credits": [{"lang": "en", "value": "Kaveh Razavi, Patrick Jattke, Stijn Gunter; Eidgen\u00f6ssische Technische Hochschule (ETH) Z\u00fcrich"}, {"lang": "en", "value": "Victor van der Veen; Qualcomm Technologies Inc."}, {"lang": "en", "value": "Pietro Frigo; VU Amsterdam"}], "datePublic": "2021-11-15T00:00:00", "descriptions": [{"lang": "en", "value": "Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication."}], "metrics": [{"cvssV3_1": {"attackComplexity": "HIGH", "attackVector": "NETWORK", "availabilityImpact": "HIGH", "baseScore": 9, "baseSeverity": "CRITICAL", "confidentialityImpact": "HIGH", "integrityImpact": "HIGH", "privilegesRequired": "NONE", "scope": "CHANGED", "userInteraction": "NONE", "vectorString": "CVSS:3.1/AV:N/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H", "version": "3.1"}}], "problemTypes": [{"descriptions": [{"cweId": "CWE-20", "description": "CWE-20: Improper Input Validation", "lang": "en", "type": "CWE"}]}], "providerMetadata": {"dateUpdated": "2021-11-16T12:47:09", "orgId": "455daabc-a392-441d-aa46-37d35189897c", "shortName": "NCSC.ch"}, "references": [{"tags": ["x_refsource_MISC"], "url": "https://comsec.ethz.ch/research/dram/blacksmith/"}, {"tags": ["x_refsource_MISC"], "url": "https://github.com/comsec-group/blacksmith"}, {"tags": ["x_refsource_CONFIRM"], "url": "https://comsec.ethz.ch/wp-content/files/blacksmith_sp22.pdf"}], "source": {"discovery": "EXTERNAL"}, "title": "Scalable Rowhammering In the Frequency Domain to Bypass TRR Mitigations On Modern DDR4/LPDDR4X Devices", "workarounds": [{"lang": "en", "value": "Using ECC DRAM substantially increases the difficulty of carrying out Rowhammer attacks on systems, although previous work [1] showed that it does not provide complete protection.\n\n[1] L. Cojocar, K. Razavi, C. Giuffrida, and H. Bos, \u201cExploiting Correcting Codes: On the Effectiveness of ECC Memory Against Rowhammer Attacks,\u201d San Francisco, CA, USA, May 2019, pp. 55\u201371. DOI: 10.1109/SP.2019.00089."}], "x_generator": {"engine": "Vulnogram 0.0.9"}, "x_legacyV4Record": {"CVE_data_meta": {"AKA": "Blacksmith", "ASSIGNER": "vulnerability@ncsc.ch", "DATE_PUBLIC": "2021-11-15T16:00:00.000Z", "ID": "CVE-2021-42114", "STATE": "PUBLIC", "TITLE": "Scalable Rowhammering In the Frequency Domain to Bypass TRR Mitigations On Modern DDR4/LPDDR4X Devices"}, "affects": {"vendor": {"vendor_data": [{"product": {"product_data": [{"product_name": "Micron ddr4_sdram", "version": {"version_data": [{"version_value": "1"}]}}]}, "vendor_name": "Micron"}, {"product": {"product_data": [{"product_name": "Samsung ddr4_sdram", "version": {"version_data": [{"version_value": "1"}]}}]}, "vendor_name": "Samsung"}, {"product": {"product_data": [{"product_name": "SK Hynix ddr4_sdram", "version": {"version_data": [{"version_value": "1"}]}}]}, "vendor_name": "SK Hynix"}, {"product": {"product_data": [{"product_name": "Micron lpddr4", "version": {"version_data": [{"version_value": "1"}]}}]}, "vendor_name": "Micron"}, {"product": {"product_data": [{"product_name": "Samsung lpddr4", "version": {"version_data": [{"version_value": "1"}]}}]}, "vendor_name": "Samsung"}, {"product": {"product_data": [{"product_name": "SK Hynix lpddr4", "version": {"version_data": [{"version_value": "1"}]}}]}, "vendor_name": "SK Hynix"}]}}, "credit": [{"lang": "eng", "value": "Kaveh Razavi, Patrick Jattke, Stijn Gunter; Eidgen\u00f6ssische Technische Hochschule (ETH) Z\u00fcrich"}, {"lang": "eng", "value": "Victor van der Veen; Qualcomm Technologies Inc."}, {"lang": "eng", "value": "Pietro Frigo; VU Amsterdam"}], "data_format": "MITRE", "data_type": "CVE", "data_version": "4.0", "description": {"description_data": [{"lang": "eng", "value": "Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication."}]}, "generator": {"engine": "Vulnogram 0.0.9"}, "impact": {"cvss": {"attackComplexity": "HIGH", "attackVector": "NETWORK", "availabilityImpact": "HIGH", "baseScore": 9, "baseSeverity": "CRITICAL", "confidentialityImpact": "HIGH", "integrityImpact": "HIGH", "privilegesRequired": "NONE", "scope": "CHANGED", "userInteraction": "NONE", "vectorString": "CVSS:3.1/AV:N/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H", "version": "3.1"}}, "problemtype": {"problemtype_data": [{"description": [{"lang": "eng", "value": "CWE-20: Improper Input Validation"}]}]}, "references": {"reference_data": [{"name": "https://comsec.ethz.ch/research/dram/blacksmith/", "refsource": "MISC", "url": "https://comsec.ethz.ch/research/dram/blacksmith/"}, {"name": "https://github.com/comsec-group/blacksmith", "refsource": "MISC", "url": "https://github.com/comsec-group/blacksmith"}, {"name": "https://comsec.ethz.ch/wp-content/files/blacksmith_sp22.pdf", "refsource": "CONFIRM", "url": "https://comsec.ethz.ch/wp-content/files/blacksmith_sp22.pdf"}]}, "source": {"discovery": "EXTERNAL"}, "work_around": [{"lang": "en", "value": "Using ECC DRAM substantially increases the difficulty of carrying out Rowhammer attacks on systems, although previous work [1] showed that it does not provide complete protection.\n\n[1] L. Cojocar, K. Razavi, C. Giuffrida, and H. Bos, \u201cExploiting Correcting Codes: On the Effectiveness of ECC Memory Against Rowhammer Attacks,\u201d San Francisco, CA, USA, May 2019, pp. 55\u201371. DOI: 10.1109/SP.2019.00089."}]}}, "adp": [{"providerMetadata": {"orgId": "af854a3a-2127-422b-91ae-364da2661108", "shortName": "CVE", "dateUpdated": "2024-08-04T03:22:25.781Z"}, "title": "CVE Program Container", "references": [{"tags": ["x_refsource_MISC", "x_transferred"], "url": "https://comsec.ethz.ch/research/dram/blacksmith/"}, {"tags": ["x_refsource_MISC", "x_transferred"], "url": "https://github.com/comsec-group/blacksmith"}, {"tags": ["x_refsource_CONFIRM", "x_transferred"], "url": "https://comsec.ethz.ch/wp-content/files/blacksmith_sp22.pdf"}]}]}, "cveMetadata": {"assignerOrgId": "455daabc-a392-441d-aa46-37d35189897c", "assignerShortName": "NCSC.ch", "cveId": "CVE-2021-42114", "datePublished": "2021-11-16T11:45:20.110793Z", "dateReserved": "2021-10-08T00:00:00", "dateUpdated": "2024-09-17T02:52:19.518Z", "state": "PUBLISHED"}, "dataType": "CVE_RECORD", "dataVersion": "5.1"}

{}

{"configurations": [{"nodes": [{"cpeMatch": [{"criteria": "cpe:2.3:o:samsung:ddr4_sdram_firmware:-:*:*:*:*:*:*:*", "matchCriteriaId": "F7B7B3AB-E3CD-4571-9A19-AFBD03574832", "vulnerable": true}], "negate": false, "operator": "OR"}, {"cpeMatch": [{"criteria": "cpe:2.3:h:samsung:ddr4_sdram:-:*:*:*:*:*:*:*", "matchCriteriaId": "11295B12-5E7E-4D06-8629-F662EC282C7F", "vulnerable": false}], "negate": false, "operator": "OR"}], "operator": "AND"}, {"nodes": [{"cpeMatch": [{"criteria": "cpe:2.3:o:samsung:lddr4_firmware:-:*:*:*:*:*:*:*", "matchCriteriaId": "6BAB185D-66CD-4A03-8826-0D503EF4890D", "vulnerable": true}], "negate": false, "operator": "OR"}, {"cpeMatch": [{"criteria": "cpe:2.3:h:samsung:lddr4:-:*:*:*:*:*:*:*", "matchCriteriaId": "7D9B5FC6-E746-4CEC-AE9A-7C74A09EC75E", "vulnerable": false}], "negate": false, "operator": "OR"}], "operator": "AND"}, {"nodes": [{"cpeMatch": [{"criteria": "cpe:2.3:o:micron:lddr4_firmware:-:*:*:*:*:*:*:*", "matchCriteriaId": "FDD050D5-E501-4DE0-9EBA-AF5D0B2EB08D", "vulnerable": true}], "negate": false, "operator": "OR"}, {"cpeMatch": [{"criteria": "cpe:2.3:h:micron:lddr4:-:*:*:*:*:*:*:*", "matchCriteriaId": "85FBC7BA-B8FE-4D0B-8A8E-3330AACE11D5", "vulnerable": false}], "negate": false, "operator": "OR"}], "operator": "AND"}, {"nodes": [{"cpeMatch": [{"criteria": "cpe:2.3:o:micron:ddr4_sdram_firmware:-:*:*:*:*:*:*:*", "matchCriteriaId": "182AF5E0-8C3D-48C6-BC01-7DBAF4B35FD8", "vulnerable": true}], "negate": false, "operator": "OR"}, {"cpeMatch": [{"criteria": "cpe:2.3:h:micron:ddr4_sdram:-:*:*:*:*:*:*:*", "matchCriteriaId": "C61E4ABB-8D8E-4EF0-9FCC-864DCA8862BA", "vulnerable": false}], "negate": false, "operator": "OR"}], "operator": "AND"}, {"nodes": [{"cpeMatch": [{"criteria": "cpe:2.3:o:skhynix:ddr4_sdram_firmware:-:*:*:*:*:*:*:*", "matchCriteriaId": "C4F12C70-E8AD-404F-A9D3-D980A758D899", "vulnerable": true}], "negate": false, "operator": "OR"}, {"cpeMatch": [{"criteria": "cpe:2.3:h:skhynix:ddr4_sdram:-:*:*:*:*:*:*:*", "matchCriteriaId": "582FC9BC-EC95-4002-944C-4453879108F8", "vulnerable": false}], "negate": false, "operator": "OR"}], "operator": "AND"}, {"nodes": [{"cpeMatch": [{"criteria": "cpe:2.3:o:skhynix:lddr4_firmware:-:*:*:*:*:*:*:*", "matchCriteriaId": "11CC190A-2784-442D-8842-CCB8BF4D54CB", "vulnerable": true}], "negate": false, "operator": "OR"}, {"cpeMatch": [{"criteria": "cpe:2.3:h:skhynix:lddr4:-:*:*:*:*:*:*:*", "matchCriteriaId": "74EF06BA-C0AD-4C65-BC80-D9B7E01E0C6D", "vulnerable": false}], "negate": false, "operator": "OR"}], "operator": "AND"}], "descriptions": [{"lang": "en", "value": "Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication."}, {"lang": "es", "value": "Los dispositivos DRAM modernos (PC-DDR4, LPDDR4X) est\u00e1n afectados por una vulnerabilidad en su mitigaci\u00f3n interna Target Row Refresh (TRR) contra los ataques Rowhammer. Los nuevos patrones de acceso Rowhammer no uniformes, que consisten en agresores con diferentes frecuencias, fases y amplitudes, permiten desencadenar cambios de bits en los m\u00f3dulos de memoria afectados usando nuestro fuzzer Blacksmith. Los patrones generados por Blacksmith fueron capaces de desencadenar cambios de bits en los 40 dispositivos DRAM PC-DDR4 de nuestro grupo de pruebas, que cubren los tres principales fabricantes de DRAM: Samsung, SK Hynix y Micron. Esto significa que, incluso cuando son usados chips anunciados como libres de Rowhammer, los atacantes pueden seguir siendo capaces de explotar Rowhammer. Por ejemplo, esto permite realizar ataques de escalada de privilegios contra el kernel o los binarios como el binario sudo, y tambi\u00e9n desencadenar cambio de bits en las claves RSA-2048 (por ejemplo, las claves SSH) para conseguir acceso a m\u00e1quinas virtuales de otros usuarios. Podemos confirmar que los dispositivos DRAM adquiridos en julio de 2020 con chips DRAM de los tres principales proveedores de DRAM (Samsung, SK Hynix, Micron) est\u00e1n afectados por esta vulnerabilidad. Para m\u00e1s detalles, consulte nuestra publicaci\u00f3n"}], "id": "CVE-2021-42114", "lastModified": "2024-11-21T06:27:17.380", "metrics": {"cvssMetricV2": [{"acInsufInfo": false, "baseSeverity": "HIGH", "cvssData": {"accessComplexity": "MEDIUM", "accessVector": "ADJACENT_NETWORK", "authentication": "NONE", "availabilityImpact": "COMPLETE", "baseScore": 7.9, "confidentialityImpact": "COMPLETE", "integrityImpact": "COMPLETE", "vectorString": "AV:A/AC:M/Au:N/C:C/I:C/A:C", "version": "2.0"}, "exploitabilityScore": 5.5, "impactScore": 10.0, "obtainAllPrivilege": false, "obtainOtherPrivilege": false, "obtainUserPrivilege": false, "source": "nvd@nist.gov", "type": "Primary", "userInteractionRequired": false}], "cvssMetricV31": [{"cvssData": {"attackComplexity": "HIGH", "attackVector": "NETWORK", "availabilityImpact": "HIGH", "baseScore": 9.0, "baseSeverity": "CRITICAL", "confidentialityImpact": "HIGH", "integrityImpact": "HIGH", "privilegesRequired": "NONE", "scope": "CHANGED", "userInteraction": "NONE", "vectorString": "CVSS:3.1/AV:N/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H", "version": "3.1"}, "exploitabilityScore": 2.2, "impactScore": 6.0, "source": "vulnerability@ncsc.ch", "type": "Secondary"}, {"cvssData": {"attackComplexity": "HIGH", "attackVector": "ADJACENT_NETWORK", "availabilityImpact": "HIGH", "baseScore": 8.3, "baseSeverity": "HIGH", "confidentialityImpact": "HIGH", "integrityImpact": "HIGH", "privilegesRequired": "NONE", "scope": "CHANGED", "userInteraction": "NONE", "vectorString": "CVSS:3.1/AV:A/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H", "version": "3.1"}, "exploitabilityScore": 1.6, "impactScore": 6.0, "source": "nvd@nist.gov", "type": "Primary"}]}, "published": "2021-11-16T12:15:06.817", "references": [{"source": "vulnerability@ncsc.ch", "tags": ["Exploit", "Third Party Advisory"], "url": "https://comsec.ethz.ch/research/dram/blacksmith/"}, {"source": "vulnerability@ncsc.ch", "tags": ["Exploit", "Third Party Advisory"], "url": "https://comsec.ethz.ch/wp-content/files/blacksmith_sp22.pdf"}, {"source": "vulnerability@ncsc.ch", "tags": ["Exploit", "Third Party Advisory"], "url": "https://github.com/comsec-group/blacksmith"}, {"source": "af854a3a-2127-422b-91ae-364da2661108", "tags": ["Exploit", "Third Party Advisory"], "url": "https://comsec.ethz.ch/research/dram/blacksmith/"}, {"source": "af854a3a-2127-422b-91ae-364da2661108", "tags": ["Exploit", "Third Party Advisory"], "url": "https://comsec.ethz.ch/wp-content/files/blacksmith_sp22.pdf"}, {"source": "af854a3a-2127-422b-91ae-364da2661108", "tags": ["Exploit", "Third Party Advisory"], "url": "https://github.com/comsec-group/blacksmith"}], "sourceIdentifier": "vulnerability@ncsc.ch", "vulnStatus": "Modified", "weaknesses": [{"description": [{"lang": "en", "value": "CWE-20"}], "source": "vulnerability@ncsc.ch", "type": "Secondary"}, {"description": [{"lang": "en", "value": "NVD-CWE-Other"}], "source": "nvd@nist.gov", "type": "Primary"}]}

{"bugzilla": {"description": "hw: dram: new non-uniform circumvent TRR to induce bit flips via Rowhammer", "id": "2023777", "url": "https://bugzilla.redhat.com/show_bug.cgi?id=2023777"}, "csaw": false, "cvss3": {"cvss3_base_score": "8.3", "cvss3_scoring_vector": "CVSS:3.1/AV:A/AC:H/PR:N/UI:N/S:C/C:H/I:H/A:H", "status": "draft"}, "cwe": "CWE-440", "details": ["Modern DRAM devices (PC-DDR4, LPDDR4X) are affected by a vulnerability in their internal Target Row Refresh (TRR) mitigation against Rowhammer attacks. Novel non-uniform Rowhammer access patterns, consisting of aggressors with different frequencies, phases, and amplitudes allow triggering bit flips on affected memory modules using our Blacksmith fuzzer. The patterns generated by Blacksmith were able to trigger bitflips on all 40 PC-DDR4 DRAM devices in our test pool, which cover the three major DRAM manufacturers: Samsung, SK Hynix, and Micron. This means that, even when chips advertised as Rowhammer-free are used, attackers may still be able to exploit Rowhammer. For example, this enables privilege-escalation attacks against the kernel or binaries such as the sudo binary, and also triggering bit flips in RSA-2048 keys (e.g., SSH keys) to gain cross-tenant virtual-machine access. We can confirm that DRAM devices acquired in July 2020 with DRAM chips from all three major DRAM vendors (Samsung, SK Hynix, Micron) are affected by this vulnerability. For more details, please refer to our publication.", "A Rowhammer flaw was found in the latest DDR4 DRAM hardware chips. This flaw is different from the previously known attack (CVE-2020-10255) by non-uniform patterns of memory access. These DDR4 DRAM hardware chips implement a Target Row Refresh (TRR) mitigation to prevent a Rowhammer flaw-induced bit corruption across memory space. This flaw allows an unprivileged system user to use Rowhammer attack variants to induce bit corruptions across memory space, potentially resulting in a denial of service or privileges escalation scenarios. With the currently known attack scenarios, the highest threat from this vulnerability is to system availability."], "mitigation": {"lang": "en:us", "value": "Red Hat has investigated whether a possible mitigation exists for this issue, and has not been able to identify a practical example. One way of possible (but non practical) mitigation is to check if hardware vulnerable with existing reproducer blacksmith and if yes, then use some software (currently only prototype available) to prevent attacks: like ARMOR or ANVIL. The other possible mitigation is to prevent high CPU (or high memory or high network) usage, because the currently known fuzzer requires some very high-speed memory access for some reasonable time period."}, "name": "CVE-2021-42114", "package_state": [{"cpe": "cpe:/o:redhat:enterprise_linux:5", "fix_state": "Not affected", "package_name": "kernel", "product_name": "Red Hat Enterprise Linux 5"}, {"cpe": "cpe:/o:redhat:enterprise_linux:6", "fix_state": "Not affected", "package_name": "kernel", "product_name": "Red Hat Enterprise Linux 6"}, {"cpe": "cpe:/o:redhat:enterprise_linux:7", "fix_state": "Not affected", "package_name": "kernel", "product_name": "Red Hat Enterprise Linux 7"}, {"cpe": "cpe:/o:redhat:enterprise_linux:8", "fix_state": "Not affected", "package_name": "kernel", "product_name": "Red Hat Enterprise Linux 8"}, {"cpe": "cpe:/o:redhat:enterprise_linux:9", "fix_state": "Not affected", "package_name": "kernel", "product_name": "Red Hat Enterprise Linux 9"}], "public_date": "2021-11-15T10:00:00Z", "references": ["https://www.cve.org/CVERecord?id=CVE-2021-42114\nhttps://nvd.nist.gov/vuln/detail/CVE-2021-42114\nhttps://access.redhat.com/articles/1377393\nhttps://comsec.ethz.ch/research/dram/blacksmith\nhttps://www.idginsiderpro.com/article/3529519/rowhammer-memory-attacks-close-in-on-the-real-world.html"], "statement": "Red Hat Product Security is aware of this issue. This is a hardware issue. It can not be fixed via usual software updates.\nFor additional information, please refer to the Red Hat Knowledgebase article: https://access.redhat.com/articles/1377393", "threat_severity": "Important"}